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| BSC028N06LS3 G OptiMOS 3 Power-Transistor TM Features * Ideal for high frequency switching and sync. rec. * Optimized technology for DC/DC converters * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance RDS(on) * Superior thermal resistance * N-channel, logic level * 100% avalanche tested * Pb-free plating; RoHS compliant * Qualified according to JEDEC1) for target applications * Halogen-free according to IEC61249-2-21 Type BSC028N06LS3 G Product Summary V DS R DS(on),max ID 60 2.8 100 V m A Package Marking PG-TDSON-8 028N06LS Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 C V GS=10 V, T C=100 C V GS=4.5 V, T C=25 C V GS=4.5 V, T C=100 C V GS=10 V, T A=25 C, R thJA=50 K/W 2) Pulsed drain current3) Avalanche energy, single pulse4) Gate source voltage 1) 2) Value 100 100 100 84 Unit A 23 400 298 20 mJ V I D,pulse E AS V GS T C=25 C I D=50 A, R GS=25 J-STD20 and JESD22 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. See figure 3 for more detailed information See figure 13 for more detailed information 3) 4) Rev. 2.2 page 1 2009-10-22 BSC028N06LS3 G Maximum ratings, at T j=25 C, unless otherwise specified Parameter Power dissipation Symbol Conditions P tot T C=25 C T A=25 C, R thJA=50 K/W 2) Operating and storage temperature IEC climatic category; DIN IEC 68-1 T j, T stg Value 139 2.5 -55 ... 150 55/150/56 C Unit W Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case Device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area2) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=93 A V DS=60 V, V GS=0 V, T j=25 C V DS=60 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D=25 A V GS=10 V, I D=50 A Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=50 A 60 1.2 1.7 0.1 2.2 1 A V 0.9 62 50 K/W 60 10 10 3.2 2.3 1.3 120 100 100 4.8 2.8 S nA m Rev. 2.2 page 2 2009-10-22 BSC028N06LS3 G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 5) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Gate charge total Output charge Reverse Diode Diode continuous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge 5) Values typ. max. Unit C iss C oss Crss t d(on) tr t d(off) tf V DD=30 V, V GS=10 V, I D=30 A, R G=3.3 V GS=0 V, V DS=30 V, f =1 MHz - 10000 1700 70 19 17 77 19 13000 pF 2300 ns Q gs Q g(th) Q gd Q sw Qg V plateau Qg Q oss V DD=30 V, I D=50 A, V GS=0 to 10 V V DD=30 V, V GS=0 V V DD=30 V, I D=50 A, V GS=0 to 4.5 V - 31 17 10 24 59 3.1 132 83 79 175 110 nC V nC IS I S,pulse V SD t rr Q rr T C=25 C V GS=0 V, I F=50 A, T j=25 C V R=30 V, I F=30A, di F/dt =100 A/s - 0.8 47 58 100 400 1.2 - A V ns nC See figure 16 for gate charge parameter definition Rev. 2.2 page 3 2009-10-22 BSC028N06LS3 G 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS10 V 160 120 140 100 120 80 100 P tot [W] 80 I D [A] 0 50 100 150 200 60 60 40 40 20 20 0 0 0 50 100 150 200 T C [C] T C [C] 3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 103 limited by on-state resistance 1 s 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 100 10 s 0.5 102 100 s 0.2 101 1 ms Z thJC [K/W] I D [A] 10-1 0.1 0.05 10 ms 100 0.02 DC 0.01 10-1 10-1 100 101 102 10-2 10-6 single pulse 10-5 10-4 10-3 t p [s] 10-2 10-1 100 V DS [V] Rev. 2.2 page 4 2009-10-22 BSC028N06LS3 G 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 400 10 V 5V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 10 9 8 3 V 3.2 V 3.5 V 4V 4.5 V 350 4.5 V 300 7 I D [A] 4V 200 R DS(on) [m] 250 6 5 4 5V 150 3.5 V 3 2 100 6V 10 V 3.2 V 50 3V 2.8 V 1 0 0 0 1 2 3 0 100 200 300 400 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 300 8 Typ. forward transconductance g fs=f(I D); T j=25 C 250 200 200 150 g fs [S] 100 100 50 150 C 25 C I D [A] 0 0 1 2 3 4 5 0 0 40 80 120 160 V GS [V] I D [A] Rev. 2.2 page 5 2009-10-22 BSC028N06LS3 G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=50 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS 5 2.5 4 2 930 A R DS(on) [m] 3 max typ 2 V GS(th) [V] 1.5 93 A 1 1 0.5 0 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 105 1000 Ciss 150 C, max 104 100 Coss 25 C C [pF] 103 I F [A] 150 C 10 102 Crss 25 C, max 101 0 20 40 60 1 0.0 0.5 1.0 1.5 2.0 V DS [V] V SD [V] Rev. 2.2 page 6 2009-10-22 BSC028N06LS3 G 13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start) 100 14 Typ. gate charge V GS=f(Q gate); I D=50 A pulsed parameter: V DD 12 30 V 10 12 V 48 V 125 C 100 C 25 C 8 10 V GS [V] 1 10 100 1000 I AV [A] 6 4 2 1 0 0 40 80 120 160 t AV [s] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 70 V GS Qg 60 V BR(DSS) [V] V g s(th) 50 Q g(th) Q gs -60 -20 20 60 100 140 180 Q sw Q gd Q g ate 40 T j [C] Rev. 2.2 page 7 2009-10-22 BSC028N06LS3 G Package Outline PG-TDSON-8 Rev. 2.2 page 8 2009-10-22 BSC028N06LS3 G Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.2 page 9 2009-10-22 |
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